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Inventi Impact: VLSI

Articles

  • Inventi:evs/32220/20
    Selective Epitaxial Growth of In Situ Doped SiGe on Bulk............................
    Research 2020 : July - September
    Konstantinos Garidis, Ahmad Abedin, Ali Asadollahi, Per-Erik Hellstrom, Mikael Ostling

    Epitaxial in situ doped Si0.73Ge0.27 alloys were grown selectively on patterned bulk Ge and\nbulk Si wafers.............................

    How to Cite this Article
    Attribution/ CC Compliant Citation: Garidis, Konstantinos, et al. \"Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation.\" Electronics 9.4 (2020): 578.\nhttps://doi:10.3390/electronics9040578\nhttp://creativecommons.org/licenses/by/4.0/\n\nSome formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.\n
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